High‐Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films

Abstract

Electrically programmable fuse-type polymer memory devices based on hyperbranched copper phthalocyanine polymer thin films are fabricated. The devices have novel write-once-read-many (WORM) memory characteristics, with a high ON/OFF current ratio (of 106) and a high electrical stability, thus opening up the possibility of a low-cost mass production of high-performance, nonvolatile polymer memory devices.