Printed, sub‐2V ZnO Electrolyte Gated Transistors and Inverters on Plastic

Abstract

Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm(-2) V(-1) s(-1) ), low operation voltage (<2 V), and good electrical/mechanical stabilities.