Influences of ScTa co-substitution on the properties of Ultra-high temperature Bi3TiNbO9-based piezoelectric ceramics

Abstract

The effect of (Sc,Ta) doping on the properties of Bi 3 TiNbO 9 -based ceramics was investigated. The (Sc,Ta) modification greatly improves the piezoelectric activity of Bi 3 TiNbO 9 -based ceramics and significantly decreases the dielectric dissipation. The d 33 of Bi 3 (Ti 0.96 Sc 0.02 Ta 0.02 )NbO 9 was found to be 12 pC/N, the highest value among the Bi 3 TiNbO 9 -based ceramics and almost 2 times as much as the reported d 33 values of the pure BTNO ceramics (~6pC/N). The high T C (higher than 900 °C) and stable piezoelectric and dielectric properties, demonstrating that the (Sc,Ta) modified Bi 3 Ti 1−x Sc x/2 Ta x/2 NbO 9 -based material a candidate for ultrahigh temperature applications. The new (ScTa) modification has an important typical significance, the way should be used for reference in constructing the new high performance materials.