Publication | Closed Access
LPE Growth and Luminescence of In<sub>1-x</sub>Ga<sub>x</sub>P<sub>y</sub>As<sub>1-y</sub> on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤E<sub>g</sub>≤1.893 eV
31
Citations
8
References
1980
Year
Wide-bandgap SemiconductorEngineeringSemiconductorsIi-vi SemiconductorOptical PropertiesQuantum MaterialsBand-gap EnergyMolecular Beam EpitaxyCompound SemiconductorElectrical EngineeringPhotoluminescencePhysicsOptoelectronic MaterialsSemiconductor MaterialLattice-matched GrowthLpe GrowthApplied PhysicsOptoelectronicsLpe Growth Method
An LPE growth method of In 1- x Ga x P y As 1- y layers on (1, 0, 0) GaAs is described over a wide range of band-gap energy. Melt compositions for lattice-matched growth of these layers are given. Photoluminescence spectra of the layers are reported, and their spectral shape and luminescent-peak energies are discussed in comparison with In 1- x Ga x P y As 1- y grown on InP.
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