Reversal of temperature dependence of integrated circuits operating at very low voltages

Abstract

This paper presents one of the first studies on the temperature dependence of integrated circuits operating at very low voltages. It was found that the performance degradation with temperature becomes smaller as the supply voltage decreases and actually reverses into enhancement below a "crossover" point in supply voltage. This reversal of temperature dependence is explained through analyses of some fundamental characteristics of MOSFET devices such as threshold voltage (V/sub T/) and carrier mobility.