Doping Mechanisms of Sn in In₂O₃ Powder Studied Using ¹¹⁹Sn Mössbauer Spectroscopy and X-Ray Diffraction

Abstract

The doping mechanism of Sn in In 2 O 3 (ITO) powder was investigated using 119 Sn transmission Mössbauer spectroscopy (TMS) and X-ray diffraction (XRD) in view of the chemical state of Sn. Deconvolution analyses of TMS spectra revealed that there was substitutional Sn 4+ coordinated not only by 6 oxygen atoms [Sn In · ] but also by 7 or 8 oxygen atoms, for the samples with doping concentrations higher than 5 at.%. The amount of such electrically deactivated Sn 4+ (coordination number of 7 or 8) increased with increasing doping concentration, which was quantitatively consistent with the decrease in doping efficiency. Precise XRD analyses indicated a systematic increase in the lattice constant with increasing doping concentration from 0.5 to 7 at.%. The increase in lattice constant was explained in terms of a repulsive force among tetravalent [Sn In · ] (coordination number of 6) with higher effective charge than In 3+ , which was also consistent with the results on the coordination of Sn 4+ obtained through TMS analyses.