Intrinsic Topological Insulator Bi₂Te₃ Thin Films on Si and Their Thickness Limit

Abstract

High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ ARPES measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.