2002 · 24 citations · 4 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice ModelingNonlinear Circuit AnalysisTransistor BiasingBipolar Junction Transistor ModelingNonlinear Device CharacterizationNonlinear ModelingSmall-signal Equivalent Circuit ModelsTransistor Nonlinearity
An improved method for accurate nonlinear modeling of transistors is proposed. It makes it possible to overcome the drawbacks of the methods generally used. It is based on pulsed S parameter measurements under pulsed bias conditions. This procedure takes into account dynamical variations without varying the temperature of the device under test. The method has been used successfully with FET transistors and may be extended to very-high-power bipolar transistors used in pulse (class C) radar applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Characterization of GaAs devices by a versatile pulsed I-V measurement system
A. Platzker, A. Palevsky, Samuel Nash et al. · 2002 · 80 citations
Engineering, Electrical Engineering, Electronic Materials +16
Accurate nonlinear modeling and verification of MMIC amplifier
V.D. Hwang, Y.C. Shih, H.M. Le · 2003 · 14 citations