2011 · 16 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesLaser DiodesLaser PhysicsOptical SourcesOxide SemiconductorsSemiconductor LasersCurrent Injection EfficiencyHigh-power LasersHigh-power Semiconductor LasersHigh-speed ModulationHigh-speed Optical ModulationModulation EfficiencySemiconductor Laser DiodesVertical-cavity Surface-emitting Lasers
By using oxide-relief technique, a high modulation-efficiency (9.8GHz/mA1/2) and a high modulation-speed (34 Gbps) with a record-high data-rate/power-dissipation ratios (2.9 (9.2) Gbps/mW at 34 (12.5) Gbps) of 850nm VCSELs have been demonstrated. 2006 Optical Society of America
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Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
S. A. Blokhin, James A. Lott, A. Mutig et al. · Electronics Letters · 2009 · 129 citations · Full text
Active Region Design for High-Speed 850-nm VCSELs
S.B. Healy, Eoin P. O’Reilly, Johan S. Gustavsson et al. · IEEE Journal of Quantum Electronics · 2010 · 81 citations · Full text