Sol‐Gel Preparation of Pb(Zr0.50Ti0.50)O3 Ferroelectric Thin Films Using Zirconium Oxynitrate as the Zirconium Source

Abstract

Lead zirconium titanate (Pb(Zr 0.5 Ti 0.5 )O 3 , PZT) ferroelectric thin films were successfully deposited on platinum‐coated silicon substrates and platinum‐coated silicon substrates with a PbTiO 3 interlayer by using a modified sol–gel spin‐coating process, using zirconium oxynitrate dihydrate as the zirconium source. The precursor solution for spin coating was prepared from lead acetate trihydrate, zirconium oxynitrate dihydrate, and tetrabutyl titanate. The use of zirconium oxynitrate instead of the widely used zirconium alkoxide provided more stability to the PZT precursor solution and a well‐crystallized structure of PZT film at a relatively low processing temperature. PZT films that were annealed at a temperature of 700°C for 2 min via a rapid thermal annealing process formed a well‐crystallized perovskite phase of PZT films and also had nanoscale uniformity. The microstructure and morphology of the prepared PZT thin films were investigated via X‐ray diffractometry, transmission electron microscopy, and atomic force microscopy techniques. The values for the remnant polarization ( P ) and coercive electric field ( E ) of the PZT films that were obtained from the P–E loop measurements were 3.67 μC/cm 2 and 54.5 kV/cm, respectively.