High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer

Abstract

Heterojunction crystalline silicon solar cells using a nanocrystalline cubic silicon carbide (nc-3C-SiC) emitter were optimized by changing the deposition time of a buffer layer. The implied open circuit voltage (implied-Voc) estimated from quasi-steady state photoconductance measurements strongly depended on the buffer deposition time. The implied-Voc of 0.690 V was achieved with a buffer deposition time of 30 s. The optimized solar cell showed an active area efficiency of 19.1% (Voc=0.680 V, Jsc=36.6 mA/cm2, and FF=0.769). The excellent cell performance is a direct evidence of the potential of the nc-3C-SiC:H emitter.