Graphene Magnetic Field Sensors

Abstract

Graphene extraordinary magnetoresistance (EMR) devices have been fabricated and characterized in varying magnetic fields at room temperature. The atomic thickness, high carrier mobility and high current carrying capabilities of graphene are ideally suited for the detection of nanoscale sized magnetic domains. The device sensitivity can reach 10 mV/Oe, larger than state of the art InAs 2DEG devices of comparable size and can be tuned by the electric field effect via a back gate or by imposing a biasing magnetic field.