Electron emission from extended defects: DLTS signal in case of dislocation traps

Abstract

Extended defects, like dislocations, composed of a number of closely spaced electron traps, possess specific features distinguishing them from isolated traps. The possibility of electron hopping between different traps, and the inter-electronic Coulomb interaction give rise to additional free energy of the extended defect. It is shown that the configurational entropy term drastically modifies the kinetics of electron emission from the defect, so that it is no more exponential with time. In consequence, non-exponential transient gives rise to a broadening of the corresponding DLTS line. This and other related effects are discussed in the case of dislocations parallel to the Schottky junction. [Russian Text Ignored].