Crystal Growth of the Perovskite Semiconductor CsPbBr₃: A New Material for High-Energy Radiation Detection

TLDR

This compound is a direct band‑gap semiconductor that satisfies key requirements for X‑ and γ‑ray detection, including high attenuation, high resistivity, and strong photoconductivity, achieving detector resolution comparable to commercial state‑of‑the‑art materials. The authors synthesized, grew crystals, and performed structural and optoelectronic characterization of CsPbBr₃. A structural phase transition occurring at higher growth temperatures does not compromise crystal quality, and the μτ product for both electrons and holes is roughly equal, with electron μτ comparable to CZT and hole μτ ten times higher than CZT.

Abstract

The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr3. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.