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A 600V8.7Ohmmm2Lateral Superjunction Transistor
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2006
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Wide-bandgap SemiconductorExperimental ResultsElectrical EngineeringEngineeringNanoelectronicsElectronic EngineeringBias Temperature InstabilityApplied PhysicsSuperconductivityPower Semiconductor DeviceForthelateral Compensation StructureMicroelectronics600V8.7ohmmm2lateral Superjunction TransistorThechip PerformanceSemiconductor Device
In thiswork we presentforthefirsttime experimental results andcorresponding device simulations for highvoltage lateral superjunction MOSFETs.We investigated experimentally various degrees ofcompensation forthelateral compensation structure andimproved additionally thechip performance byoptimizing thelayout. We alsorealized I different layouts inorder toimprove thechip performance. We showthat ablocking voltage (BV)of640Visachieved. Devices blocking above 600Vachieve an on-resistance of 7.1s,which corresponds toaRds,on xA of8.7Q2mm2.