Quantitative evaluation of shunts in solar cells by lock‐in thermography

Abstract

Abstract Infrared lock‐in thermography allows to image shunts very sensitively in all kinds of solar cells and also to measure dark currents flowing in certain regions of the cell quantitatively. After a summary of the physical basis of lock‐in thermography and its practical realization, four types of quantitative measurements are described: local I–V characteristics measured thermally up to a constant factor (LIVT); the quantitative measurement of the current through a local shunt; the evaluation of the influence of shunts on the efficiency of a cell as a function of the illumination intensity; and the mapping of the ideality factor n and the saturation current density J 0 over the whole cell. The investigation of a typical multicrystalline solar cell shows that the shunts are predominantly responsible for deterioration of the low‐light‐level performance of the cell, and that variations of the injection current density related to crystal defects are predominantly determined by variation of J 0 rather than of n. Copyright © 2003 John Wiley & Sons, Ltd.