Journal of Physics D Applied Physics · 1996 · 330 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceElectrochemistrySemiconductor MaterialsThin FilmsElectrode MaterialsOrganic Electronic MaterialsOrganic SemiconductorsOxide SemiconductorsSemiconductor Device MaterialsThin Film Electrical PropertiesElectroluminescent MaterialsIndium Tin Oxide Thin FilmsMetal Oxide ElectrodesOperating VoltageThin Oxide FilmsThin-film ElectrodesThin-film OxidesVoltage
We demonstrate that by using thin films of metal oxides, such as vanadium oxide (VOx), molybdenum oxide (MoOx) and ruthenium oxide (RuOx), as a hole-injecting layer for an organic electroluminescent (EL) device consisting of N,N'-diphenyl-N,N-bis(3-methylphenyl1)1,1'-biphenyl-4,4' diamine (TPD) and tris-(8-quinolinolato) aluminium (Alq), the EL device performance can be significantly improved. The `operating voltage' of the device is reduced with respect to a device with a well known indium - tin-oxide (ITO) electrode for hole injection. We consider that the improvement of the operating voltage is attributable to the lower energy barrier for hole injection at the metal oxide/TPD interface.
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Organic electroluminescent diodes
Chak Wah Tang, S. A. VanSlyke · Applied Physics Letters · 1987 · 14.3K citations
Natural Sciences, Materials Engineering, Materials Science +17
Reliability and degradation of organic light emitting devices
P. E. Burrows, Vladimir Bulović, Stephen R. Forrest et al. · Applied Physics Letters · 1994 · 737 citations