Journal of the American Ceramic Society · 1982 · 181 citations · 9 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSolid State PhysicsDefects In Electronic MaterialsElectrical CharacterizationElectrical ConductivityElectrical Properties Of CeramicsElectronic Material CharacterizationOxide SemiconductorsConductionConductivityElectrical PropertiesElectronic ConductionElectronic ConductivityOxygen VacanciesSeebeck CoefficientTemperature Dependence Of Electrical Properties
Electronic conductivity and Seebeck coefficients of LaFeO 3 were measured as a function of temperature (1000° to 1400°C) and P ( O 2 ) (10 5 to 10 −13 Pa). Electronic conduction was found to be n‐type in the lower P ( O 2 ) range, and p ‐type in a higher P(O 2 ) range. The calculated carrier mobilities suggest a hopping‐type conduction mechanism. The carrier concentrations were calculated as a function of P ( O 2 ) and the defect structure was described. It was found that the electrical properties of LaFeO 3 are determined not only by the concentration of oxygen vacancies, but also by the La/Fe ratio.
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