Publication | Closed Access
1.52-1.59-μm range different-wavelength modulator-integrated DFB-LDs fabricated on a single wafer
33
Citations
5
References
1998
Year
Optical MaterialsEngineeringOptical Transmission SystemIntegrated CircuitsHigh-power LasersOptical AmplifierOptical AmplificationSemiconductor LasersOptical PropertiesLaser AmplifiersPhotonic Integrated CircuitOptical CommunicationFiber LaserPhotonicsGain BandLaser CompositionMicroelectronicsPhotonic DeviceNormal FiberWavelength TuningSingle WaferErbium-doped Fiber AmplifierOptoelectronicsLasersFibre Amplifier
We report for the first time different-wavelength modulator-integrated distributed-feedback laser diodes (DFB/MODs) fabricated on a single wafer, whose lasing wavelength cover almost all of the expanded erbium-doped fiber amplifier (EDFA) gain band from 1.527 to 1.593 μm. The devices provided uniform and high-performance characteristics such as a threshold current less than 12 mA and successful transmission of 2.5 Gb/s-600 km through a normal fiber.
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