Publication | Closed Access
Sharp Metal-Insulator Transition in a Random Solid
350
Citations
28
References
1980
Year
SemiconductorsMaterials ScienceSharp Metal-insulator TransitionZero-temperature Metallic ConductivitiesEngineeringBulk CrystalsPhysicsScaling FormIntrinsic ImpurityApplied PhysicsCondensed Matter PhysicsQuantum MaterialsDisordered Quantum SystemTopological InsulatorSemiconductor MaterialCharge Carrier TransportSolid-state Physic
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value ${\ensuremath{\sigma}}_{min}$ in bulk crystals of P-doped Si. Conductivities below ${\ensuremath{\sigma}}_{min}$ increase by over ${10}^{3}$ as the density is raised by less than 1%, and do not rule out a discontinuous transition. However, over a wider density range the data can be fitted with a scaling form with a characteristic length that tends to diverge with the same exponent in the metal and insulator.
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