IEEE Journal of Solid-State Circuits · 2004 · 63 citations · 4 references
EngineeringMeasurementReflectance VariationsEducationIntegrated CircuitsPixel SizeTransient ImagingScene DepthImage SensorCalibrationComputational ImagingInstrumentationVision SensorTime-of-flight ImagingTime-of-flight CameraComputer EngineeringRange ImagingOptical Sensors3-D Measurement ApplicationsOptical Information Processing
A 4/spl times/64 pixel 3-D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. The measurement range is up to 8 m with resolution of 1 cm. The scene depth is determined by measurement of the travel time of reflected laser pulses by employing a fast on-chip synchronous shutter (maximum shutter speed 30 ns). The multiple double short time integration (MDSI) algorithm enables suppression of the background illumination and correction for reflectance variations in the scene objects. The pixel size is 130/spl times/300 /spl mu/m/sup 2/. The sensor chip has been realized in a 0.5-/spl mu/m n-well standard CMOS process.
4
Solid-state time-of-flight range camera
Robert Lange, Peter Seitz · IEEE Journal of Quantum Electronics · 2001 · 676 citations
A CMOS photosensor array for 3D imaging using pulsed laser
R. Jeremias, W. Brockherde, G. Doemens et al. · 2001 · 63 citations
Engineering, Cmos Photosensor Array, Integrated Circuits +19
A 4/spl times/64 pixel CMOS image sensor for 3D measurement applications
Olaf Schrey, O. Elkhalili, P. Mengel et al. · 2003 · 15 citations
Engineering, Measurement, Education +18