Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 µm emission self-assembled InAs/GaAs quantum dots

Abstract

Self-assembled InAs quantum dots (QDs) with differing deposition thicknesses covered by InxAl1−xAs (x = 0.2, 0.3) and In0.2Ga0.8As combination strain-reducing layers (CSRLs) were grown by molecular beam epitaxy. Their structural and optical properties were investigated by atomic force microscopy and photoluminescence spectroscopy, respectively. The emission peak position of InAs QDs capped by CSRL can reach 1.34 µm at room temperature with a relatively larger energy splitting of 93 meV between the ground and first excited states.