Photo‐Physical Behaviors of Efficient Green Phosphor Ba ₂ MgSi ₂ O ₇ :Eu ²⁺ and Its Application in Light‐Emitting Diodes

Abstract

An efficient green phosphor, Ba 2 MgSi 2 O 7 :Eu 2+ , was prepared by a solid‐state reaction. Excited by 350–420 nm light, the phosphor shows a strong and broad emission band centering at 505 nm. The concentration quenching mechanism was verified to be a dipole–dipole interaction and the critical energy‐transfer distance was confirmed as around 20 Å by both the calculated crystal structure method and the experimental spectral method. This phosphor shows a low thermal‐quenching property with an activation energy of 0.677 eV. Light‐emitting diodes (LEDs) were fabricated with Ba 2 MgSi 2 O 7 :0.07Eu 2+ and 395‐nm‐emitting InGaN chips and exhibited strong wide‐band green emission and relatively stable current‐dependent electroluminescence properties, indicating that this phosphor is a promising candidate as a green component for the fabrication of white LEDs.