Ion beam deposition of Mn-Ir spin valves

Abstract

Half-biased spin valves have been prepared by ion beam deposition. The magnetoresistance (MR) signal reaches 7.7% and the exchange field is 350 Oe with a coupling field of 15 Oe and a coercivity of the free layer equal to 4 Oe. The [111] texture induced by a very thin Ta buffer layer (thickness <10 /spl Aring/) has a strong effect in increasing the MR signal and coupling field, while decreasing the exchange field and coercivity. The blocking temperature of the MnIr-biased spin valves is 250/spl deg/C and a thermal stability study shows that the exchange field is constant up to 300/spl deg/C, under consecutive 5-h anneals at each temperature. After these anneals, the MR signal is still equal to 5%. These films show better thermal stability than equivalent samples prepared by sputtering.