Effect of AlN film thickness on photo/dark currents of MSM UV photodetector

Abstract

Abstract In this article, we have successfully fabricated the metal‐semi‐conductor‐metal (MSM) UV photodetector using the aluminum nitride‐based (AlN) film as an active layer grown on p‐type Si (100) by a dc sputtering deposition. Effect of AlN thickness of 500, 1500, and 2500 nm on the surface morphology of the AlN film and photo/dark currents of the MSM photodetector is investigated. With increase of the AlN thickness, XRD result shows the crystallization of AlN film increases. The device can be extensively used in solar‐blind UV applications. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2863–2866, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23796