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Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

Materials ScienceMaterials EngineeringAtomic Scale IntermixingAluminium NitrideEngineeringInterface StructurePhysicsSurface ScienceApplied PhysicsCondensed Matter PhysicsAmorphous Al2o3/semiconductor InterfaceAmorphous SolidMolecular DynamicsInterface Property