Nanoscale Ultraviolet‐Light‐Emitting Diodes Using Wide‐Bandgap Gallium Nitride Nanorods

Abstract

The fabrication of p–n junctions in individual GaN nanorods has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV light‐emitting diodes is demonstrated. The Figure is a luminescence image of the light emitted from a forward‐biased nanorod p–n junction at 3 V.