Stacked FET structure for multi-band mobile terminal power amplifier module

Abstract

A multi-band PHEMT 5 × 7 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> PA module for mobile applications is described based upon a stacked FET structure. The PA has 28.5 dBm linear output power and over 40 % PAE with -38 dBc ACLR for a 3.2 V supply voltage, covering a wide frequency range of 698-915 MHz, 1430-1450 MHz and 1710-1980 MHz. A Stacked FET structure and the method to align voltage phase of stacked FETs are described. The module contains two PA chips, one output switch and MIPI RFFE interface compatible PA and SW controller.