2005 · 38 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice CharacterizationDevice ModelingField-effect TransistorsHigh-frequency Semiconductor DevicesMicrowave MeasurementsMicrowave Semiconductor DevicesCompressionLarge-signal Device ModelingLarge-signal ModelingMicrowave TransistorsNonlinear Device CharacterizationSmall-signal Device ModelingSmall-signal Equivalent Circuit ModelsTransistor Nonlinearity
A new method for measuring the nonlinear characteristics of microwave GaAs field-effect transistors (FETs) has been developed and evaluated. The technique, which involves RF rather than DC FET measurement, has yielded significant improvement in circuit compression point and harmonic content modeling accuracy.
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