W-band GaN power amplifier MMICs

Abstract

An advanced high power, high frequency GaN semiconductor process has made possible the design and fabrication of W-band power amplifier MMICs with unprecedented performance. The key enabling semiconductor technology is a 150 nm T-gate GaN HEMT with an output power exceeding 300 mW and a peak PAE (power added efficiency) of 37%. With this process, W-band power amplifier MMICs have been designed and fabricated that demonstrate output powers of 1.7 watts, power added efficiencies greater than 20%, and small signal gains of 21 dB. In addition, the compactness of these MMIC designs have allowed for MMIC power densities (MMIC output power relative to MMIC area) exceeding 1/2 watt/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .