GaAsSb DHBT IC technology for RF and microwave instrumentation

Abstract

A high performance GaAsSb base, InP collector DHBT IC process has been developed for RF, microwave and telecommunications instrumentation. The GaAsSb process achieves f/sub T/ and f/sub max/ values of 185 GHz and 220 GHz respectively, at operating currents of J/sub c/= 1.5 mA//spl mu/m/sup 2/, with catastrophic on-state breakdown voltages of BVcbx = 9 V at J/sub c/= 1.3 mA//spl mu/m/sup 2/. Typical /spl beta/= 50. The MTTF values of > 1 /spl times/ 10/sup 6/ h at maximum operating conditions (T/sub j/ = 125 /spl deg/C, J/sub c/ = 2.0 mA//spl mu/m/sup 2/) are suitable for instrumentation-grade applications. The DHBTs are integrated with a 3-layer metal chassis including 2 resistor levels and an MIM capacitor. This IC technology is manufactured on a 3" production line for use in Agilent Technologies instrumentation products.