Crystal Data, Electrical Resisitivity and Mobility in Cu₃In₅Se₉ and Cu₃In₅Te₉ Single Crystals

Abstract

Abstract X‐ray powder diffraction data were obtained for Cu 3 In 5 Se 9 and Cu 3 Te 9 , which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu 3 In 5 Se 9 , was identified to be n ‐type with a room temperature resistivity of 3 × 10 3 Ω·cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu 3 In 5 Te 9 exhibits p ‐type conduction with a room temperature resistivity of 8.5 × 10 −3 Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.