Silicon Schottky Diode Power Converters Beyond 100 GHz

Abstract

This paper presents circuits based on Schottky barrier diodes (SBDs) in IBM's 0.13-μm SiGe BiCMOS process. Circuits such as sub-harmonic up-conversion mixers and frequency doublers are demonstrated at frequencies beyond 100 GHz on silicon. These circuits enable power generation at millimeter wave frequencies on silicon. The frequency doublers can deliver >0 dBm output power at 110 GHz and the 2X sub-harmonic up converters exhibit peak conversion loss of <3dB up to 120 GHz.