Silicon surface tunnel transistor

TLDR

The paper presents a silicon surface tunneling transistor based on lateral band‑to‑band tunneling. The device operates via gate‑controlled modulation of the tunneling barrier width, with its theory, fabrication, and operation detailed. Experimental and simulation results confirm the device’s operation, showing dramatic drain‑current variations with gate bias.

Abstract

A silicon surface tunneling transistor structure, based on lateral band-to-band tunneling, is presented. The theory, fabrication, and operation of the device is described. Band-to-band tunneling is controlled by the bias on the gate of the device which modulates the width of the tunneling barrier. The operation of the device is confirmed in both experimental results and two-dimensional computer simulations. Dramatic differences in drain current are observed for different gate bias.