Publication | Closed Access
A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver
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Citations
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References
1992
Year
Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsIntegrated Optoelectronic ReceiverGaas Material SystemPhotodetectorsElectronic EngineeringPhotonic Integrated CircuitPhotonicsElectrical EngineeringOptoelectronic MaterialsPhotoelectric MeasurementMicroelectronicsMicrowave PhotonicsPseudomorphic IngaasApplied PhysicsOptoelectronicsOptical Devices
A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with f/sub t/'s of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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