InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 /spl mu/m

Abstract

Buried heterostructure lasers with highly strained InGaAs-InGaAsP active regions, emitting at 2 μm have been fabricated and tested. The lasers exhibited threshold current densities of 500 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for 1-mm-long cavities, an internal loss of 11 cm/sup -1/, and characteristic temperatures as high as 50/spl deg/C. The gain characteristics were also investigated and a linewidth enhancement factor of 8 was determined.