Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias - Concepedia

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Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias

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2013

Year

Y. Yamamoto, Hideki Makiyama, Yasuo Yamaguchi

Unknown Venue

Low-power ElectronicsMinimum Operation VoltageElectrical EngineeringEngineeringVlsi DesignAdvanced Packaging (Semiconductors)Record 0.37VBias Temperature InstabilityApplied PhysicsEmerging Memory TechnologyComputer EngineeringSemiconductor MemoryV MinMicroelectronicsUltralow-voltage Operation

Abstract

We demonstrated record 0.37V minimum operation voltage (V min ) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks to the small variability of SOTB (A VT ∼1.3 mVµm) and adaptive back biasing (ABB), V min was lowered down to ∼0.4 V regardless of temperature. Both fast access time and small standby leakage were achieved by ABB.