Record‐Low Inhomogeneous Broadening of Site‐Controlled Quantum Dots for Nanophotonics

Abstract

Large arrays of dense, site-controlled InGaAs/GaAs quantum dots (QDs) are grown by organometallic chemical vapor deposition in an ordered pattern of tetrahedral recesses (pyramids). These QDs exhibit a low inhomogeneous broadening (≈1 meV), large s–p separation (>50 meV), and efficient single-photon emission.