The effect of ALD-Zno layers on the formation of CH₃NH₃PbI₃ with different perovskite precursors and sintering temperatures

Abstract

ZnO films deposited by atomic layer deposition at 70 °C were used to fabricate perovskite solar cells, and a conversion efficiency of 13.1% was obtained. On the ZnO layer, CH3NH3PbI3 was formed at room temperature using CH3NH3I and PbCl2 precursors, which is in contrast to the reported results.