Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology

Abstract

In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 ¿m 15 ¿m InP HBT device with maximum frequency of oscillation (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) greater than 500 GHz and of 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 ± 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain of 3.5d B and demonstrates the highest frequency measured HBT amplifier gain reported to date. Both amplifiers show excellent agreement with original simulation.