Publication | Closed Access
Plasma‐Resistant Dense Yttrium Oxide Film Prepared by Aerosol Deposition Process
158
Citations
14
References
2007
Year
Materials ScienceRoom TemperatureThin Film PhysicsPlasma ExposureEngineeringOxide ElectronicsSurface ScienceApplied PhysicsMaterials CharacterizationY 2Aerosol Deposition ProcessThin Film Process TechnologyThin FilmsPlasma ProcessingChemical Vapor DepositionThin Film Processing
Dense yttrium oxide film was prepared on a quartz substrate by the aerosol deposition process at the room temperature. The deposition rate was very high, 60 m/h. Thick film of 10 m was easily achievable on the quartz substrate. Transmission electron microscopy showed that the film was highly dense without voids and was composed of randomly oriented Y 2 O 3 crystallites of sizes smaller than 20 nm. The interface between the film layer and the quartz substrate was homogeneous. The film (2‐m thick) had a high transmittance (55–85%) in the wavelength region of 250‐800 nm. The mechanical properties of the film were very good. The adhesion force of the interface between the Y 2 O 3 layer and the quartz substrate was over 80 MPa. The Vickers hardness of the film was 7.7 GPa. The film also had an excellent plasma resistance in a gas mixture of CF 4 /O 2 . Outstanding results were noted in eroded depth, surface roughness, nanostructure, and transmittance change after plasma exposure of the film.
| Year | Citations | |
|---|---|---|
Page 1
Page 1