Direct extraction methodology for geometry-scalable RF-CMOS models

Abstract

A new method to directly extract the MOSFET small-signal parameters ncluding non-quasi-static effects - from Z and Y parameter measurements is presented. This technique is employed to generate a scalable BSIM3v3 model valid for standard, low and high-threshold p- and n-channel MOSFETs at frequencies up to 50 GHz. The model accurately captures cutoff frequency degradation for unit gate finger widths below 1 /spl mu/m and was employed to verify the measured jitter of a 10-Gb/s MOS-CML output driver.