Publication | Closed Access
The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
68
Citations
24
References
2008
Year
Materials ScienceMaterials EngineeringHigh-quality Ge EpilayerEngineeringApplied PhysicsSemiconductor Device FabricationVacuum DeviceSilicon On InsulatorEpitaxial GrowthChemical Vapor Deposition
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