High-Temperature Continuous-Wave Single-Mode Operation of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot VCSELs

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-<formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox {m}}$</tex> </formula> InAs–GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}\hbox{C}$</tex></formula> to 60 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}\hbox{C}$</tex> </formula>. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed. </para>