New power device figure of merit for high-frequency applications

Abstract

A new power device figure of merit is proposed for high-frequency applications. Based on a theoretical analysis, the impacts of circuit topologies and material properties are examined. This figure of merit is very useful in optimizing or choosing a power device operating in high-frequency circuits. A thin-film SOI power MOSFET is taken as an example, and the effect of its device parameters on the power loss is analyzed to provide a basic guideline for optimization.