A low-noise amplifier at 77 GHz in SiGe:C bipolar technology

Abstract

A single ended low noise amplifler at 77GHz has been designed, implemented, and characterized. The focus was on a low noise flgure, reasonable input and out- put matching, and a high input compression point which are basic requirements for automotive radar applications or car{to{car communication systems. The LNA was fa- bricated in a 225GHz fT SiGe:C bipolar technology. At 77GHz, the measured gain of the LNA is 8.9dB, and the measured noise flgure at 77GHz is 4.8dB. The measured input compression point at 77GHz is -3dBm. The cir- cuit was designed for a supply voltage of 5.5V and draws 22mA.