Ni3N/Ni composites with <i>in-situ</i> growth heterogeneous interfaces as microwave absorbing materials

Abstract

We herein report the electromagnetic and microwave absorption properties of Ni3N and Ni3N/Ni composites. The Ni3N/Ni composites with controlled compositions were synthesized by an in-situ thermal decomposition of Ni3N at various calcination temperatures. The mostly optimized Ni3N/Ni composite presents enhanced microwave absorption performances than single phase Ni and Ni3N particles, which is attributed to a proper ratio between Ni and Ni3N components. Such heterogeneous components not only improve the dielectric loss capacity by metal/semiconductor interfaces but can also constitute a significant balance between magnetic losses and dielectric losses, so called the electromagnetic impedance match. This study thus provides a vision to metal/semiconductor materials with in-situ growth interfaces as a potential family of microwave absorbing materials.