Sol-Gel-Derived Mesoporous Silica Films with Low Dielectric Constants

Abstract

Mesoporous silica films with low dielectric constants and possibly closed pores have been achieved with a multiple step sol-gel processing technique. Crack-free films with approximately 50 % porosity and 0.9 μm thicknesses were obtained, a tape-test revealing good adhesion between films and substrates or metal electrodes. Dielectric constants remained virtually unchanged after aging at room temperature at 56 % humidity over 6 days.