A Single-Chip Dual-Band 22–29-GHz/77–81-GHz BiCMOS Transceiver for Automotive Radars

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Integration of multi-mode multi-band transceivers on a single chip will enable low-cost millimeter-wave systems for next-generation automotive radar sensors. The first dual-band millimeter-wave transceiver operating in the 22–29-GHz and 77–81-GHz short-range automotive radar bands is designed and implemented in 0.18-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex> </formula>m SiGe BiCMOS technology with<formula formulatype="inline"><tex Notation="TeX">$f_{T}/f_{\max}$</tex></formula> of 200/180 GHz. The transceiver chip includes a dual-band low noise amplifier, a shared downconversion chain, dual-band pulse formers, power amplifiers, a dual-band frequency synthesizer and a high-speed highly-programmable baseband pulse generator. The transceiver achieves 35/31-dB receive gain, 4.5/8-dB double side-band noise figure, <formula formulatype="inline"><tex Notation="TeX">${&gt;}$</tex></formula>60/30-dB cross-band isolation, <formula formulatype="inline"><tex Notation="TeX">${-}$</tex></formula>114/<formula formulatype="inline"><tex Notation="TeX">$-$</tex></formula>100.4-dBc/Hz phase noise at 1-MHz offset, and 14.5/10.5-dBm transmit power in the 24/79-GHz bands. Radar functionality is also demonstrated using a loopback measurement. The 3.9<formula formulatype="inline"><tex Notation="TeX">$\,\times\,$</tex></formula>1.9-mm<formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula> 24/79-GHz transceiver chip consumes 0.51/0.615 W. </para>