Electrical Properties of ZnO/p-Si Heterojunction for Solar Cell Application

Abstract

in this study, we report the ZnO thin films prepared by spray pyrolysis method at 550C° with good transparency in the v isible region. The Zn O film was deposited on Si substrates to fro m the n-Zn0/ p -Si heterojuction. The morphology and electrical properties of the films have been carried out by means of scanning electron microscopy (SEM) and I-V measurements. The current-voltage characteristic of the n-Zn 0/ p-Si heterojunction device measured at roo m temperature in the dark and under illu mination (lamp/160 W).